Toshiba Semiconductor and Storage TPW1R306PL,L1Q
- TPW1R306PL,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 60V 260A 8DSOP
- Transistors - FETs, MOSFETs - Single
- TPW1R306PL,L1Q Fiche technique
- 8-PowerWDFN
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 4214
- Stock au comptant / revendeur autorisé / surplus dusine
- Garantie de qualité de 1 an 》
- Cliquez pour obtenir les tarifs
Part Number TPW1R306PL,L1Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 60V 260A 8DSOP |
Package Jinftry-Reel® |
Series U-MOSIX-H |
Operating Temperature 175°C |
Mounting Type Surface Mount |
Package / Case 8-PowerWDFN |
Supplier Device Package 8-DSOP Advance |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 960mW (Ta), 170W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 260A (Tc) |
Rds On (Max) @ Id, Vgs 1.29mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerWDFN |
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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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