Toshiba Semiconductor and Storage TK31N60W,S1VF
- TK31N60W,S1VF
- Toshiba Semiconductor and Storage
- MOSFET N CH 600V 30.8A TO247
- Transistors - FETs, MOSFETs - Single
- TK31N60W,S1VF Fiche technique
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 4804
- Stock au comptant / revendeur autorisé / surplus dusine
- Garantie de qualité de 1 an 》
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Part Number TK31N60W,S1VF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N CH 600V 30.8A TO247 |
Package Tube |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 230W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) |
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V |
Vgs(th) (Max) @ Id 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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Toshiba Semiconductor and Storage
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