IXYS IXTA3N60P
- IXTA3N60P
- IXYS
- MOSFET N-CH 600V 3A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA3N60P Fiche technique
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant
- 29891
- Stock au comptant / revendeur autorisé / surplus dusine
- Garantie de qualité de 1 an 》
- Cliquez pour obtenir les tarifs
Part Number IXTA3N60P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 600V 3A TO263 |
Package Tube |
Series PolarHV™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 70W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 3A (Tc) |
Rds On (Max) @ Id, Vgs 2.9Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 5.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 411 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA3N60P Des garanties
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IXYS
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